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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB925 DESCRIPTION *High Collector Current:: IC= -7A *Low Collector Saturation Voltage : VCE(sat)= -0.6V(Max)@IC= -5A *High Speed Switching APPLICATIONS *Designed for low voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage ww w scs .i VALUE -40 -20 -5 -7 -12 30 UNIT .cn mi e V V V A A IC Collector Current-Continuous ICM Collector Current-Peak Total Power Dissipation @ TC=25 Junction Temperature PC W TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Collector Output Capacitance CONDITIONS IC= -10mA; IB= 0 IC= -5A; IB= -0.16A B 2SB925 MIN -20 TYP. MAX UNIT V -0.6 -1.5 -50 -50 45 V V A A IC= -5A; IB= -0.16A B VCB= -40V; IE= 0 VEB= -5V; IC= 0 IC= -0.1A; VCE= -2V IC= -2A; VCE= -2V Current-Gain--Bandwidth Product Switching times ton tstg tf Turn-on Time Storage Time Fall Time w w P 130-260 scs .i w IE= 0; VCB= -10V; f= 1MHz IC= -0.5A; VCE= -10V .cn mi e 60 260 140 150 pF MHz 0.1 0.5 0.1 s s s VCC= -20V;IC= -2A; IB1= -IB2= -66mA hFE-2 Classifications R 60-120 Q 90-180 isc Websitewww.iscsemi.cn 2 |
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